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5SHX 26L4520

Data Sheet 5SHX 26L4520_5SYA1251-00Feb 12.pdf
VDRM 4500 V
VDC 2800 V
ITGQM 2200 A
ITAVM (GCT) 1010 A
IFAVM (Diode) 390 A
VGIN 28 to 40 V
Outline Fig. 1
Product Type Gate Commutated Thyristors
ITSM at 10 ms TVJM 17.0 kA
VT 2.95 V
VTO 1.80 V
rT 0.53 mO
Max. di/dt 650 A/µs
TVJM 125 ºC
RthJC 13 K/kW
Fm 44 kN
IFSM(Diode) 10.6 kA
VF(Diode) 5.40 V
VFO(Diode) 2.70 V
rF(Diode) 1.24 mO
Irr(Diode) 900 A
RthJC Diode Part (K/kW)(Diode) 26 K/kW
  • For special requirements, ABB has optimized some components for use in Pulsed Power Applications. These components are designed for very high di/dt switching, fast turn-on in combination with very high current capability high voltages and most of them include special driver units.
  • The products shown in this overview are only some examples of the capabilities of our pulsed power group. Besides the components listed below, we continue to design and produce special components and switches, which will meet the requirements of future markets.