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5SLD 1200J330100

Data Sheet 5SLD 1200J330100.pdf
VCES 3300 V
IC 1200 A
Package HiPak1 HV
Configuration Dual Diode
Outline J4
Operating Temperature 125 ºC
VF(V) typ. 125°C 2.35
Product Type IGBT Packs
  • High power, industry standard package.
  • Designed for high reliability.
  • Aluminum Silicon Carbide base plate for high power cycling.
  • Aluminum Nitride substrates for low thermal resistance.
  • Designed for very high SOA (Safe Operating Area).
  • Low conduction and switching losses.
  • Smooth switching characteristics for good EMC.