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Power Semi-conductors
IGBT & Diode Dies
IGBT Dies
5SMY 76H1280
5SMY 76H1280
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Symbol Notation Guide
Technical Data Sheet
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Specifications
Description
Data Sheet
5SMY12H1280.pdf
Type
SPT+
Size A x B
9.1 x 9.1 mm
Thickness
140 µm
VCES
1200 V
IC
57 A
Max. dies per wafer (W) or tray (T)
Tray
Product Type
IGBT Dies
Size A
9.1 mm
Size B
9.1 mm
ICM
114 A
VCEsat
2.1 V
Please consult factory for lower current rating 1200V and 1700V IGBT SPT+ chips.
Please consult factory for lower current rating 1200V and 1700V IGBT SPT+ chips.
Home
All Categories
Power Semi-conductors
IGBT & Diode Dies
IGBT Dies
5SMY 76H1280
5SMY 76H1280
Please consult factory for lower current rating 1200V and 1700V IGBT SPT+ chips.
Data Sheet
5SMY12H1280.pdf
Type
SPT+
Size A x B
9.1 x 9.1 mm
Thickness
140 µm
VCES
1200 V
IC
57 A
Max. dies per wafer (W) or tray (T)
Tray
Product Type
IGBT Dies
Size A
9.1 mm
Size B
9.1 mm
ICM
114 A
VCEsat
2.1 V
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