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5STB 13N6500

Data Sheet 5STB13N6500.pdf
IRMS at TC=70ºC 3120 A
ITAVM at TC=70ºC 1405 A
Housing N
Product Type Controlled Thyristors
ITSM at 10 ms TVJM 22.0 kA
VTO 1.20 V
rT 0.60 mO
TVJM 125 ºC
RthJC 11.4 K/kW
RthCH 2.0 K/kW
Fm 90 kN
Replaces Two 5STP 13N6500

The BCT consists of two anti-parallel high power thyristors integrated on a single silicon wafer with separate gate contacts. The reduction in component count results in lower cost and higher reliability. For other wafer diameters and lower voltages please contact the factory.

  • Two anti-parallel thyristors on one Si-wafer.
  • Patented free-floating silicon technology.
  • Design for high power industrial and power transmission applications.
  • Matched Qrr values available for series connection.