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5STB 18N4200

Data Sheet 5STB18N4200.pdf
VSM 4200 V
IRMS at TC=70ºC 4260 A
ITAVM at TC=70ºC 1920 A
ITSM at 8.3 ms TVJM 32 kA
Housing N
Product Type Controlled Thyristors
ITSM at 10 ms TVJM 32 kA
VTO 0.96 V
rT 0.285 mO
TVJM 125 ºC
RthJC 11.4 K/kW
RthCH 2.0 K/kW
Fm 90 kN
Replaces Two 5STP 18N4200

The BCT consists of two anti-parallel high power thyristors integrated on a single silicon wafer with separate gate contacts. The reduction in component count results in lower cost and higher reliability. For other wafer diameters and lower voltages please contact the factory.

  • Two anti-parallel thyristors on one Si-wafer.
  • Patented free-floating silicon technology.
  • Design for high power industrial and power transmission applications.
  • Matched Qrr values available for series connection.