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5STB 25U5200

Data Sheet 5STB25U5200.pdf
IRMS at TC=70ºC 4400 A
ITAVM at TC=70ºC 1980 A
ITSM at 8.3 ms TVJM 45 kA
Housing U
Product Type Controlled Thyristors
ITSM at 10 ms TVJM 42.0 kA
VTO 1.06 V
rT 0.219 mO
TVJM 110 ºC
RthJC 8.5 K/kW
RthCH 1.6 K/kW
Fm 135 kN
Replaces Two 5STP 25U5200

The BCT consists of two anti-parallel high power thyristors integrated on a single silicon wafer with separate gate contacts. The reduction in component count results in lower cost and higher reliability. For other wafer diameters and lower voltages please contact the factory.

  • Two anti-parallel thyristors on one Si-wafer.
  • Patented free-floating silicon technology.
  • Design for high power industrial and power transmission applications.
  • Matched Qrr values available for series connection.