The BCT consists of two anti-parallel high power thyristors integrated on a single silicon wafer with separate gate contacts. The reduction in component count results in lower cost and higher reliability. For other wafer diameters and lower voltages please contact the factory.

• Two anti-parallel thyristors on one Si-wafer.
• Patented free-floating silicon technology.
• Design for high power industrial and power transmission applications.
• Matched Qrr values available for series connection.