The BCT consists of two anti-parallel high power thyristors integrated on a single silicon wafer with separate gate contacts. The reduction in component count results in lower cost and higher reliability. For other wafer diameters and lower voltages please contact the factory.
Item # |
Data Sheet |
VSM |
IRMS at TC=70ºC |
ITAVM at TC=70ºC |
ITSM at 8.3 ms TVJM |
Housing |
|
---|---|---|---|---|---|---|---|
5STB 13N6500 |
N/A |
3120 A |
1405 A |
N/A |
N |
||
5STB 17N5200 |
N/A |
4000 A |
1800 A |
31 kA |
N |
||
5STB 18N4200 |
4200 V |
4260 A |
1920 A |
32 kA |
N |
||
5STB 18U6500 |
N/A |
3510 A |
1580 A |
N/A |
U |
||
5STB 24N2800 |
2800 V |
5400 A |
2430 A |
46 kA |
N |
||
5STB 24Q2800 |
2800 V |
5840 A |
2630 A |
46 kA |
Q |
||
5STB 25U5200 |
N/A |
4400 A |
1980 A |
45 kA |
U |