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Diode Dies

  • State-of the-art planar IGBT and matching fast diode dies.
  • High dynamic ruggedness, low switching losses.
  • Low on-state voltage with positive temperature coefficient.
  • Easy paralleling for reliable circuit operation.
  • Available as unsawn or sawn wafer or in waffle pack trays.
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Item #

Data Sheet

Type

Size A x B

Thickness

VRRM

IF

VF

Max. dies per wafer (W) or tray (T)

5SLY 12J1700

5SLY86J1700 - 12J1700.pdf

SPT+

10.2 x 10.2 mm

390 µm

1700 V

150 A

2.1 V

36 (T)

5SLY 12M1700

5SLY86M1700 - 12M1700.pdf

SPT+

13.6 x 13.6 mm

390 µm

1700 V

300 A

2.1 V

25 (T)

5SLY 76E1200

5SLY76E1200 - 86E1200.pdf

SPT+

6.3 x 6.3 mm

350 µm

1200 V

50 A

1.85 V

Tray

5SLY 76F1200

5SLY76E1200 - 86E1200.pdf

SPT+

7.4 x 7.4 mm

350 µm

1200 V

75 A

1.85 V

Tray

5SLY 76G1200

5SLY76E1200 - 86E1200.pdf

SPT+

8.4 x 8.4 mm

350 µm

1200 V

100 A

1.85 V

Tray

5SLY 76J1200

5SLY76J1200 - 86J1200.pdf

SPT+

10.0 x 10.0 mm

350 µm

1200 V

150 A

1.85 V

Tray

5SLY 86E1200

5SLY76E1200 - 86E1200.pdf

SPT+

6.3 x 6.3 mm

350 µm

1200 V

50 A

1.85 V

361 (W)

5SLY 86E1700

5SLY86E1700.pdf

SPT+

6.3 x 6.3 mm

390 µm

1700 V

50 A

2.1 V

326 (W)

5SLY 86F1200

5SLY76E1200 - 86E1200.pdf

SPT+

7.4 x 7.4 mm

350 µm

1200 V

75 A

1.85 V

257 (W)

5SLY 86F1700

5SLY86E1700.pdf

SPT+

7.7 x 7.7 mm

390 µm

1700 V

75 A

2.1 V

237 (W)

5SLY 86G1200

5SLY76G1200 - 86G1200.pdf

SPT+

8.4 x 8.4 mm

350 µm

1200 V

100 A

1.85 V

198 (W)

5SLY 86G1700

5SLY86E1700.pdf

SPT+

8.6 x 8.6 mm

390 µm

1700 V

100 A

2.1 V

188 (W)

5SLY 86J1200

5SLY76J1200 - 86J1200.pdf

SPT+

10.0 x 10.0 mm

350 µm

1200 V

150 A

1.85 V

137 (W)

5SLY 86J1700

5SLY86J1700 - 12J1700.pdf

SPT+

10.2 x 10.2 mm

390 µm

1700 V

150 A

2.1 V

131 (W)

5SLY 86M1700

5SLY86M1700 - 12M1700.pdf

SPT+

13.6 x 13.6 mm

390 µm

1700 V

300 A

2.1 V

69 (W)

5SLZ 86J1700

5SLZ86J1700.pdf

SPT++

10.2 x 10.2 mm

370 µm

1700 V

150 A

1.75 V

131 (W)