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Diode Dies

State-of the-art planar IGBT and matching fast diode dies.
High dynamic ruggedness, low switching losses.
Low on-state voltage with positive temperature coefficient.
Easy paralleling for reliable circuit operation.
Available as unsawn or sawn wafer or in waffle pack trays.

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Item #	Data Sheet	Type	Size A x B	Thickness	VRRM	IF	VF	Max. dies per wafer (W) or tray (T)
5SLY 12J1700	5SLY12J1700.pdf	SPT+	10.2 x 10.2 mm	390 µm	1700 V	150 A	2.1 V	36 (T)
5SLY 12M1700	5SLY12M1700.pdf	SPT+	13.6 x 13.6 mm	390 µm	1700 V	300 A	2.1 V	25 (T)
5SLY 76E1200	5SLY12E1200.pdf	SPT+	6.3 x 6.3 mm	350 µm	1200 V	50 A	1.85 V	Tray
5SLY 76F1200	5SLY12F1200.pdf	SPT+	7.4 x 7.4 mm	350 µm	1200 V	75 A	1.85 V	Tray
5SLY 76G1200	5SLY12G1200.pdf	SPT+	8.4 x 8.4 mm	350 µm	1200 V	100 A	1.85 V	Tray
5SLY 76J1200	5SLY12J1200.pdf	SPT+	10.0 x 10.0 mm	350 µm	1200 V	150 A	1.85 V	Tray
5SLY 86E1200	5SLY12E1200.pdf	SPT+	6.3 x 6.3 mm	350 µm	1200 V	50 A	1.85 V	361 (W)
5SLY 86E1700	5SLY12E1700.pdf	SPT+	6.3 x 6.3 mm	390 µm	1700 V	50 A	2.1 V	326 (W)
5SLY 86F1200	5SLY12F1200.pdf	SPT+	7.4 x 7.4 mm	350 µm	1200 V	75 A	1.85 V	257 (W)
5SLY 86F1700	5SLY12F1700.pdf	SPT+	7.7 x 7.7 mm	390 µm	1700 V	75 A	2.1 V	237 (W)
5SLY 86G1200	5SLY12G1200.pdf	SPT+	8.4 x 8.4 mm	350 µm	1200 V	100 A	1.85 V	198 (W)
5SLY 86G1700	5SLY12G1700.pdf	SPT+	8.6 x 8.6 mm	390 µm	1700 V	100 A	2.1 V	188 (W)
5SLY 86J1200	5SLY12J1200.pdf	SPT+	10.0 x 10.0 mm	350 µm	1200 V	150 A	1.85 V	137 (W)
5SLY 86J1700	5SLY12J1700.pdf	SPT+	10.2 x 10.2 mm	390 µm	1700 V	150 A	2.1 V	131 (W)
5SLY 86M1700	5SLY12M1700.pdf	SPT+	13.6 x 13.6 mm	390 µm	1700 V	300 A	2.1 V	69 (W)
5SLZ 86J1700	5SLZ12J1700.pdf	SPT++	10.2 x 10.2 mm	370 µm	1700 V	150 A	1.75 V	131 (W)