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  6. IGBT Hipak Modules

IGBT Hipak Modules

  • High power, industry standard package.
  • Designed for high reliability.
  • Aluminum Silicon Carbide base plate for high power cycling.
  • Aluminum Nitride substrates for low thermal resistance.
  • Designed for very high SOA (Safe Operating Area).
  • Low conduction and switching losses.
  • Smooth switching characteristics for good EMC.
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Item #

Data Sheet

VCES

IC

Package

Configuration

Outline

Operating Temperature

VCEsat(V) typ. 125°C

VF(V) typ. 125°C
5SNA 1000J450300

5SNA 1000J450300.pdf

N/A

N/A

N/A

N/A

N/A

N/A

N/A

N/A

5SNA 1500E450300

5SNA 1500E450300.pdf

N/A

N/A

N/A

N/A

N/A

N/A

N/A

N/A

5SNA 1500G450350

5SNA 1500G450350.pdf

N/A

N/A

N/A

N/A

N/A

N/A

N/A

N/A

5SLA 3600E170300

5SLA 3600E170300.pdf

1700 V

3600 A

HiPak2

Single Diode

E6

150 ºC

N/A

1.95

5SLD 0600J650100

5SLD 0600J650100.pdf

6500 V

2 x 600 A

HiPak1 HV

Dual Diode

J4

125 ºC

N/A

3.4

5SLD 0650J450300

5SLD 0650J450300.pdf

4500 V

2 x 650 A

HiPak1 HV

Dual Bridge

J4

125 ºC

N/A

3.4

5SLD1000J650300

5SLD1000J650300.pdf

N/A

N/A

N/A

N/A

N/A

N/A

N/A

N/A

5SLD 1000N330300

5SLD 1000N330300.pdf

3300 V

2 x 1000 A

HiPak1

Dual Diode

N1 (4)

150 ºC

N/A

2.25

5SLD 1200J330100

5SLD 1200J330100.pdf

3300 V

1200 A

HiPak1 HV

Dual Diode

J4

125 ºC

N/A

2.35

5SLD 1200J450350

5SLD 1200J450350.pdf

4500 V

2 x 1200 A

HiPak1 HV

Dual Diode

J4

125 ºC

N/A

3.5

5SLG 0500P330300

5SLG 0500P330300.pdf

3300 V

2 x 500 A

HiPak0 HV

Diode Bridge

P7

150 ºC

N/A

2.25

5SLG 0600P450300

5SLG 0600P450300.pdf

4500 V

2 x 600 A

HiPak0 HV

Diode Bridge

P7

125 ºC

N/A

3.5

5SNA 0400J650100

5SNA 0400J650100.pdf

6500 V

400 A

HiPak1 HV

Single IGBT

J1

125 ºC

5.4

3.4

5SNA 0500J650300

5SNA 0500J650300.pdf

6500 V

500 A

HiPak1 HV

Single IGBT

J1

125 ºC

3.9

3.4

5SNA 0600G650100

5SNA 0600G650100.pdf

6500 V

600 A

HiPak2 HV

Single IGBT

G1

125 ºC

5.4

3.4

5SNA 0650J450300

5SNA 1200G450300.pdf

4500 V

650 A

HiPak1 HV

Single IGBT

J1

125 ºC

3.7

3.4

5SNA 0750G650300

5SNA 0750G650300.pdf

6500 V

750 A

HiPak2 HV

Single IGBT

G1

125 ºC

3.9

3.4

5SNA 0800J450300

5SNA 0800J450300.pdf

4500 V

800 A

HiPak1 HV

Single IGBT

J1

125 ºC

3.55

3.5

5SNA 0800N330100

5SNA 0800N330100.pdf

3300 V

800 A

HiPak1

Single IGBT

N1 (1)

125 ºC

3.8

2.35

5SNA 1000N330300

5SNA 1000N330300.pdf

3300 V

1000 A

HiPak1

Single IGBT

N1 (1)

150 ºC

3.1

2.25

5SNA 1200E330100

5SNA 1200E330100.pdf

3300 V

1200 A

HiPak2

Single IGBT

E1

125 ºC

3.8

2.35

5SNA 1200G330100

5SNA 1200G330100.pdf

3300 V

1200 A

HiPak2 HV

Single IGBT

G1

125 ºC

3.85

2.35

5SNA 1200G450300

5SNA 1200G450300.pdf

4500 V

1200 A

HiPak2 HV

Single IGBT

G1

125 ºC

3.55

3.5

5SNA 1200G450350

5SNA 1200G450350.pdf

4500 V

1200 A

HiPak2 HV

Single IGBT

G1

125 ºC

3.55

3.5

5SNA 1500E330305

5SNA 1500E330305.pdf

3300 V

1500 A

HiPak2

Single IGBT

E1

150 ºC

3.1

2.25

  • High power, industry standard package.
  • Designed for high reliability.
  • Aluminum Silicon Carbide base plate for high power cycling.
  • Aluminum Nitride substrates for low thermal resistance.
  • Designed for very high SOA (Safe Operating Area).
  • Low conduction and switching losses.
  • Smooth switching characteristics for good EMC.