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IGBT Stakpak Press-packs

Revolutionary press-pack design guarantees uniform chip pressure, even in long stacks.
Allows redundancy.
Modular sub-assemblies allow range expansion (higher voltages planned).
Designed for very high SOA (Safe Operating Area).
Low conduction and switching losses.

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Item #	Data Sheet	VCES	IC	Configuration	VCEsat(V) typ. 125°C	VF(V) typ. 125°C	IGBT-to-diode ratio	Housing
5SNA 1300K450300	5SNA1300K450300.pdf	4500 V	1300 A	N/A	3.4	2.3	1:1	K
5SNA 2000K450300	5SNA2000K450300.pdf	4500 V	2000 A	N/A	3.4	2.4	1:1	K
5SNA 2000K451300	5SNA2000K451300.pdf	4500 V	2000 A	N/A	3.5	3.0	2:1	K
5SNA2000K452300	5SNA2000K452300.pdf
5SNA3000K452300	5SNA3000K452300.pdf
5SJA3000L520300	5SJA3000L520300.pdf
5SMA3000L450300	5SMA3000L450300.pdf


	Revolutionary press-pack design guarantees uniform chip pressure, even in long stacks. Allows redundancy. Modular sub-assemblies allow range expansion (higher voltages planned). Designed for very high SOA (Safe Operating Area). Low conduction and switching losses.