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  5. Integrated Gate Commutated Thyristors (Asymmetric IGCTs)

Integrated Gate Commutated Thyristors (Asymmetric IGCTs)

  • Patented free-floating silicon technology.
  • Patented low-inductance housing technology.
  • Exceptionally low on-state losses.
  • Optical trigger input and status feedback.
  • Fast response and precise timing.
  • AC square wave or DC supply input.
  • Cosmic radiation withstand rating.
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Item #

Data Sheet

VDRM

VDC

ITGQM

ITAVM

VGIN

Product Type
5SHY 35L4520

5SHY35L4520.pdf

4500 V

2800 V

4000 A

1700 A

28 to 40 V

Gate Commutated Thyristors

5SHY 35L4521

5SHY 35L4521_5SYA1253-00Feb 12.pdf

4500 V

2800 V

4000 A

1700 A

28 to 40 V

Gate Commutated Thyristors

5SHY 35L4522

5SHY35L4522.pdf

4500 V

2800 V

4000 A

2100 A

28 to 40 V

Gate Commutated Thyristors

5SHY 42L6500

5SHY42L6500.pdf

6500 V

4000 V

3800 A

1290 A

28 to 40 V

Gate Commutated Thyristors

5SHY 50L5500

5SHY50L5500.pdf

5500 V

3300 V

3600 A

1290 A

28 to 40 V

Gate Commutated Thyristors

5SHY 55L4500

5SHY55L4500.pdf

4500 V

2800 V

5000 A

1870 A

28 to 40 V

Gate Commutated Thyristors

5SHY45L4520

5SHY45L4520.pdf

  • Patented free-floating silicon technology.
  • Patented low-inductance housing technology.
  • Exceptionally low on-state losses.
  • Optical trigger input and status feedback.
  • Fast response and precise timing.
  • AC square wave or DC supply input.
  • Cosmic radiation withstand rating.