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Technical Papers
Technical papers concerning our Gate Driver Sensors and Power Semiconductors.
- Power Semiconductors
- IGBT Dies
- IGBT Modules
- Applying IGBTs
- A High Voltage IGBT and Diode Chip Set designed for the 2.8kV DC Link Level with Short Circuit Capability extending to the Maximum Blocking Voltage
- Extending the Boundary Limits of High Voltage IGBTs and Diodes to above 8kV
- A Study of Switching-Self-Clamping-Mode “SSCM” as an Over-voltage Protection Feature in High Voltage IGBTs
- A Landmark in Electrical Performance of IGBT Modules Utilizing Next Generation Chip Technologies
- 1200V IGBTs operating at 200°C? An investigation on the potentials and the design constraints
- Thermal Runaway During Blocking
- Surge Currents of IGBT Diodes
- Switching-Self-Clamping-Mode “SSCM”, A breakthrough in SOA performance for high voltage IGBTs and Diodes
- Soft Punch Through (SPT) – Setting new Standards in 1200V IGBT
- Novel Soft-Punch-Through (SPT) 1700V IGBT Sets Benchmark on Technology Curve
- 2.5kV-6.5kV Industry Standard IGBT Modules Setting a New Benchmark in SOA Capability
- SPT+, the Next Generation of Low-Loss HV-IGBTs
- HiPak Modules with SPT+ Technology Rated up to 3.6kA
- High Voltage SPT+ HiPak Modules Rated at 4500V
- Next Generation Planar IGBTs with SPT+ Technology
- Mounting Instructions for Hi-Pak Modules
- A 6.5kV IGBT Module with very high Safe Operating Area
- SOA in High Power Semiconductors
- Novel Enhanced-Planar IGBT Technology Rated up to 6.5kV for Lower Losses and Higher SOA Capability
- Failure rates of HiPak modules due to cosmic rays
- Bipolar Turn-off Devices
- IGCT
- A Family of Reverse Conducting Gate Commutated Thyristors for Medium Voltage Drive Applications
- A New Range of Reverse Conducting Gate-Commutated Thyristors For High Voltage, Medium Power Applications
- Voltage Rating of High Power Semiconductors
- SOA in High Power Semiconductors
- An Application-Specific Asymmetric IGCT
- GTO
- IGCT
- Thyristors
- PCT
- BCT
- Diodes
- Crossing Point Current of Electron and Proton Irradiated Power P-i-N Diodes
- High Power Rectifier Diodes
- Fast Recovery
- New Plasma Shaping Technology for Optimal High Voltage Diode Performance
- The Field Charge Extraction (FCE) Diode A Novel Technology for Soft Recovery High Voltage Diodes
- 1200V Merged PIN Schottky Diode with Soft Recovery and Positive Temperature Coefficient
- A New Generation of Asymmetric and Reverse Conducting GTOs and their Snubber Diodes
- Applying Fast Recovery Diodes
- Freewheeling Diode Reverse Recovery Failure Modes in IGBT Applications
- Why is Plasma Engineering in Fast Recovery Diodes by Ion Irradiation superior to Emitter Efficiency Reduction?
- Crossing Point Current of Power P-i-N Diodes: Impact of Lifetime Treatment
- The Design, Application and Production-Testing of High-Power Fast Recovery Diodes
- Free Wheeling Diodes With Improved Reverse Recovery By Combined Electron and Proton Irradiation
- A New Degree of Freedom in Diode Optimization: Arbitrary Axial Lifetime Profiles by Means of Ion Irradiation
- Application-Specific Fast-Recovery Diodes: Design and Performance
- 4.5 kV-Fast-Diodes with Expanded SOA Using a Multi-Energy Proton Lifetime Control Technique
- Standard Recovery
- Welding Diodes
- Pulsed Power
- High Current, High Voltage Solid State Discharge Switches for Electromagnetic Launch Applications
- Solutions with Solid State Switches for Pulse Modulators
- 12.6 KA / 20 KV / 300 HZ Reverse Conducting Solid State Closing Switch For De-Nox / De-Sox Modulator
- Design and Reliability of a High Voltage, high Current Solid State Switch for Magnetic Forming Applications