Technical Papers

Technical papers concerning our Gate Driver Sensors and Power Semiconductors.

• Power Semiconductors
  • IGBT Dies
    • Applying IGBT and Diode dies
  • IGBT Modules
    • Applying IGBTs
    • A High Voltage IGBT and Diode Chip Set designed for the 2.8kV DC Link Level with Short Circuit Capability extending to the Maximum Blocking Voltage
    • Extending the Boundary Limits of High Voltage IGBTs and Diodes to above 8kV
    • A Study of Switching-Self-Clamping-Mode “SSCM” as an Over-voltage Protection Feature in High Voltage IGBTs
    • A Landmark in Electrical Performance of IGBT Modules Utilizing Next Generation Chip Technologies
    • 1200V IGBTs operating at 200°C? An investigation on the potentials and the design constraints
    • Thermal Runaway During Blocking
    • Surge Currents of IGBT Diodes
    • Switching-Self-Clamping-Mode “SSCM”, A breakthrough in SOA performance for high voltage IGBTs and Diodes
    • Soft Punch Through (SPT) – Setting new Standards in 1200V IGBT
    • Novel Soft-Punch-Through (SPT) 1700V IGBT Sets Benchmark on Technology Curve
    • 2.5kV-6.5kV Industry Standard IGBT Modules Setting a New Benchmark in SOA Capability
    • SPT+, the Next Generation of Low-Loss HV-IGBTs
    • HiPak Modules with SPT+ Technology Rated up to 3.6kA
    • High Voltage SPT+ HiPak Modules Rated at 4500V
    • Next Generation Planar IGBTs with SPT+ Technology
    • Mounting Instructions for Hi-Pak Modules
    • A 6.5kV IGBT Module with very high Safe Operating Area
    • SOA in High Power Semiconductors
    • Novel Enhanced-Planar IGBT Technology Rated up to 6.5kV for Lower Losses and Higher SOA Capability
    • Failure rates of HiPak modules due to cosmic rays
• Bipolar Turn-off Devices
  • IGCT
    • A Family of Reverse Conducting Gate Commutated Thyristors for Medium Voltage Drive Applications
    • A New Range of Reverse Conducting Gate-Commutated Thyristors For High Voltage, Medium Power Applications
    • Voltage Rating of High Power Semiconductors
    • SOA in High Power Semiconductors
    • An Application-Specific Asymmetric IGCT
  • GTO
    • Voltage Rating of High Power Semiconductors
    • A New Generation of Asymmetric and Reverse Conducting GTOs and their Snubber Diodes
    • Proton Irradiation For Improved GTO Thyristors
    • SOA in High Power Semiconductors
    • GTO Data Handbook
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    • Section 1: Product Introduction and Logistics
    • Section 2: Product Design
    • Section 3: Data Sheet User's Guide
    • Section 4: Reliability and Testing
    • Section 5: Application Aspects
• Thyristors
  • PCT
    • Design of RC Snubbers for Phase Control Applications
    • Voltage Rating of High Power Semiconductors
    • Gate-Drive recommendations for Phase Control Thyristors
    • PCT Data Handbook
  • 
    
    • Section 1: Product Introduction and Logistics
    • Section 2: Product Design
    • Section 3: Data Sheet User's Guide
    • Section 4: Testing and Reliability
    • Section 5: Application Aspects
  • BCT
    • Voltage Rating of High Power Semiconductors
    • The Bidirectional Control Thyristor (BCT)
    • Bi-Directionally Controlled Thyristors
    • Gate-Drive recommendations for Phase Control Thyristors
• Diodes
  • Crossing Point Current of Electron and Proton Irradiated Power P-i-N Diodes
  • High Power Rectifier Diodes
  • Fast Recovery
    • New Plasma Shaping Technology for Optimal High Voltage Diode Performance
    • The Field Charge Extraction (FCE) Diode A Novel Technology for Soft Recovery High Voltage Diodes
    • 1200V Merged PIN Schottky Diode with Soft Recovery and Positive Temperature Coefficient
    • A New Generation of Asymmetric and Reverse Conducting GTOs and their Snubber Diodes
    • Applying Fast Recovery Diodes
    • Freewheeling Diode Reverse Recovery Failure Modes in IGBT Applications
    • Why is Plasma Engineering in Fast Recovery Diodes by Ion Irradiation superior to Emitter Efficiency Reduction?
    • Crossing Point Current of Power P-i-N Diodes: Impact of Lifetime Treatment
    • The Design, Application and Production-Testing of High-Power Fast Recovery Diodes
    • Free Wheeling Diodes With Improved Reverse Recovery By Combined Electron and Proton Irradiation
    • A New Degree of Freedom in Diode Optimization: Arbitrary Axial Lifetime Profiles by Means of Ion Irradiation
    • Application-Specific Fast-Recovery Diodes: Design and Performance
    • 4.5 kV-Fast-Diodes with Expanded SOA Using a Multi-Energy Proton Lifetime Control Technique
  • Standard Recovery
    • High Power Rectifier Diodes
  • Welding Diodes
    • Rectifier Diodes For Medium Frequency Welding Machines
• Pulsed Power
  • High Current, High Voltage Solid State Discharge Switches for Electromagnetic Launch Applications
  • Solutions with Solid State Switches for Pulse Modulators
  • 12.6 KA / 20 KV / 300 HZ Reverse Conducting Solid State Closing Switch For De-Nox / De-Sox Modulator
  • Design and Reliability of a High Voltage, high Current Solid State Switch for Magnetic Forming Applications

• Gate Drive Sensors
  • IGBT drivers correctly calculated, AN-9701
  • Design of driver cards with SCALE drivers, AN-9901
  • Two and four-quadrant DC/DC converters with SCALE drivers, AN-9902
• Sensors
  • Current Sensors: Hall Effect, Closed Loop Technology, Functioning Description
  • Current Sensors: NCS Range
  • Voltage Sensors: VS Range
  • Voltage Sensors: VD Range